Samsung today announced production of its first ultra-high-speed, 4Gbit low-power mobile DRAM chip, which uses the company's most compact circuitry to date.
The new double data rate 3 (LPDDR3) mobile DRAM, which is produced using a 20-nanometer manufacturing process, can transmit data at up to 2.1Gbps per pin. The new DRAM performance is more than double that of the preceding memory standard mobile DRAM (LPDDR2), which had a data transmission rate of up to 800Mbps.
With 2.1Gbps performance, a mobile device with the Samsung chip embedded could transmit three full HD videos, collectively 17 GB in length, in one second.
Samsung said its new LPDDR3 mobile DRAM enables seamless display of full HD video on smartphones with five inch-or-larger screens. In comparison to a 30nm-class LPDDR3 DRAM, the new device generates more than a 30% improvement in performance and 20% savings in power consumption, the company said.
The new 20nm process node also offers mobile devices 2GB of memory by using four of the new chips, which have a height of .8mm or about .3 inches.
"By providing the most efficient next-generation mobile memory with a very large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace," Young-Hyun Jun, executive vice president of memory sales for Samsung Electronics, said in a statement.
This article, Samsung builds chips to supercharge your smartphone, was originally published at Computerworld.com.
Lucas Mearian covers storage, disaster recovery and business continuity, financial services infrastructure and health care IT for Computerworld. Follow Lucas on Twitter at @lucasmearian or subscribe to Lucas's RSS feed. His e-mail address is firstname.lastname@example.org.
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